In the metallization step, a structure undergoes a diffusion barrier etch step. The copper dual damascene process involves three main parts: metallization low-k dielectrics and the capping layer. For this, chipmakers use 193nm immersion and multiple patterning. Initially, in the flow, each level of a given chip structure must be patterned to create the wiring schemes. In the BEOL, there are many process steps, which fall into two categories - patterning and the dual damascene process. Interconnects, the tiny wiring schemes in devices, are becoming more compact at each node, causing a resistance-capacitance (RC) delay in chips. The backend-of-the-line (BEOL) is second major stage of the semiconductor manufacturing process where the interconnects are formed within a device.
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